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FQ T1N60C
N-Channel QF E T ? MOSFET
600V, 0.2 A, 11.5 ?
Description
Features
March 2013
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor ? ’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
? 0. 2 A, 6 0 0 V, R DS(on) = 9.3 ? (
? Low G ate C harge ( Typ. nC)
? Low C rss ( Typ. pF)
? 100% A valanche T ested
? RoHS Compliant
.) @V GS =10 V , I D = 0. 1 A
D
D
S
G
G
SOT-223
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted*
Symbol
V DSS
Drain to Source Voltage
Parameter
FQT1N60C
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
-Continuous (T C = 25 o C)
-Continuous (T C = 100 o C)
±30
0.2
0.12
V
A
I DM
Drain Current
- Pulsed
(Note 1)
0.8
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
33
0.2
0.2
4.5
2.1
0.02
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
Thermal Characteristics
Symbol
R θ JA
Parameter
Thermal Resistance, Junction to Ambient*
Min.
-
Max.
60
Unit
o C/W
* When mounted on the minimum pad size recommended (PCB Mount)
?2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
1
www.fairchildsemi.com
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